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PD -91750AIRG4IBC20FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.66V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.66V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). @VGE = 15V, IC = 9.0AE IGBT co-packaged with HEXFREDTM ultrafast,n-channel ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outlineBenefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMITO-220 FULLPAKAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage