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PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation 3@VGE = 15V, IC = 27A IGBT co-packaged with HEXFREDTM ultrafast,E ultra-soft-recovery anti-parallel diodes for use inn-channel bridge configurations Industry standard TO-247AC package Lead-FreeBenefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics requireless/no snubbing Designed to be a "dr