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IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM E Positive VCE (ON) Temperature Co-Efficient VCE(on) typ. = 1.9Vn-channel Tight Parameter Distribution Lead Free PackageG G Benefits Device optimized for induction heating and soft switchingE E applicationsC C G High Efficiency due to Low VCE(on), low switching lossesG and Ultra-low VF Rugged transient performance for increased reliabilityTO-247AC TO-247AD Excellent current sharing in parallel operationIRG7PH35UD1PbF IRG7PH35U