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PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET ) VDSS RDS(on) max (m ) ID ) ) ) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount 165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier G 1 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This 3 D benefit provides the designer with an extremely efficient device for use in battery and load management applications. 2 S Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (