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R UMW UMW IRLML5203 UMW IRLML5203 UMW IRLML5203 SOT-23 Plastic-Encapsulate MOSFETS SOT 23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX 85m @-10 V 1. BASE -3. 0A -30V 145m @-4.5V 2. EMITTER 3. COLLECTOR General Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Equivalent Circuit MARKING 1H MK Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Units Drain-Source voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -3.0 A Drain Current-Pulsed IDM -24 A Power Dissipation PD 300 mW Thermal Resistance from Junction to Ambient R JA 417 /W Junction Temperature TJ 150 Storage Temperature TSTG -55 +150 www.umw-ic.com 1