Скачать даташит для irlml5203pbf:

IRLML5203PbF l Ultra Low On-Resistance HEXFET Power MOSFET l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Surface Mount l Available in Tape & Reel -30V 98@VGS = -10V -3.0A l Low Gate Charge 165@VGS = -4.5V -2.6A l Lead-Free l RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the 3 D designer with an extremely efficient device for use in battery and load management applications. S 2 A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a Micro3TM HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (