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IRLML5203TRPBF www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23) G G 1 3 D S 2 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS 20 TC = 25 C - 5.6 TC = 70 C - 5.1 Continuous Drain Current (TJ = 150 C) ID TA = 25 C - 5.4b,c TA = 70 C - 4.3b,c A Pulsed Drain Current (t = 100 s) IDM - 18 TC = 25 C - 2.1 Continous Source-Drain Diode Current IS TA = 25 C - 1b,c TC = 25 C 2.5 TC = 70 C