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PD - 9.1508CIRLMS1503HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 30V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with Rds(on)60% less than a similar size SOT-23. This package isMicro6ideal for applications where printed circuit board spaceis at a premium. It's unique thermal design and RDS(on)reduction enables a current-handling increase