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PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fastswitching speed and ruggedized device design thatHEXFET power MOSFETs are well known for,provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with RDS(on)60% less than a similar size SOT-23. This package isMicro6ideal for applications where printed circuit board spaceis at a premium