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Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25oC)17IDAContinuous Drain Current (TC=100oC)12IDM Drain Current-Pulsed1 98 AOVGS Gate-to-Source Voltage_ V2EAS Single Pulsed Avalanche Energy385 mJOIAR Avalanche Current1 17 AOEAR Repetitive Avalanche Energy 1 4.4 mJO3dv/dt Peak Diode Recovery dv/dt 6.5 V/ns OTotal Power Dissipation (TC=25 oC)44 WPDoLinear Derating Factor C0.29 Opera