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IRLSZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25oC)8IDAContinuous Drain Current (TC=100oC)5.6IDM Drain Current-Pulsed 1 32 AO +VGS Gate-to-Source Voltage _ 0 VEAS Single Pulsed Avalanche Energy 255 mJOIAR Avalanche Current 1 8 AOEAR Repetitive Avalanche Energy mJ1 2.0Odv/dt Peak Diode Recovery dv/dt 35.5 V/ns OTotal Power Dissipation (TC=25oC) W20PDoLinear Derating Fac