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IRLSZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25oC)14IDAContinuous Drain Current (TC=100oC)10IDM Drain Current-Pulsed 1 56 AO +VGS Gate-to-Source Voltage _ 0 VEAS Single Pulsed Avalanche Energy 2168 mJOIAR Avalanche Current 1 14 AOEAR Repetitive Avalanche Energy mJ1 3.1Odv/dt Peak Diode Recovery dv/dt 35.5 V/ns OTotal Power Dissipation (TC=25oC) W31PDoLinear Derating F