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IRLSZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25 oC)30IDAoContinuous Drain Current (TC=100 C)21IDM Drain Current-Pulsed1 120 AO +VGS Gate-to-Source Voltage _ 20 VEAS Single Pulsed Avalanche Energy 2771 mJ OIAR Avalanche Current1 30 AOEAR Repetitive Avalanche Energy mJ1 4.5 Odv/dt Peak Diode Recovery dv/dt 35.5 V/ns OTotal Power Dissipation (TC=25oC ) W45PDLinear Derating Fa