Скачать даташит для ixdh30n120_ixdt30n120_ixdh30n120d1_ixdt30n120d1:

IXDH 30N120VCES = 1200 VHigh Voltage IGBTIXDH 30N120 D1IC25 = 60 Awith optional DiodeIXDT 30N120VCE(sat) typ = 2.4 VIXDT 30N120 D1Short Circuit SOA CapabilityC CSquare RBSOATO-247 AD (IXDH)G GE EGCC (TAB)IXDH 30N120 IXDH 30N120 D1EIXDT 30N120 IXDT 30N120 D1TO--268 AA (IXDT)Symbol Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEC (TAB)VCGR TJ = 25C to 150C; RGE = 20 kW 1200 VG = Gate, E = EmitterVGES Continuous 20 V C = Collector , TAB = CollectorVGEM Transient 30 VIC25 TC = 25C 60 AIC90 TC = 90C 38 AFeaturesICM TC = 90C, tp = 1 ms 76 ANPT IGBT technologylow saturation voltageRBSOA VGE = 15 V, TJ = 125C, RG = 47 W ICM = 50 Alow switching lossesClamped inductive load, L = 30 H VCEK