Скачать даташит для ixdh30n120d1:

IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V low saturation voltageVCGR TJ = 25C to 150C; RGE = 20 k 1200 V low switching lossesVGES Continuous 20 V square RBSOA, no latch upVGEM Transient 30 V high short circuit capability positive temperature coefficient forIC25 TC = 25C 60 Aeasy parallelingIC90 TC = 90C 38 A MOS input, voltage controlledICM TC = 90C; tp = 1 ms 76 A optional ultra fast diode International standard packagesRBSOA VGE = 15 V; TJ = 125C; RG = 47