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80V, 199A, 2.7m N-channel Power SGT MOSFETJBE083MProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 ARDS(ON)_Typ(@VGS=10V 2.7 mWApplications Load Switch PWM Application Power ManagementDG STO-263-3L Top ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JBE083M TO-263-3LBE083M 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 80 VVGS Gate-to-Source Voltage 20 VTC = 25 199CIDContinuous Drain Current ATC = 100 140CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 900 mJSingle Pulsed Avalanc