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80V, 133A, 5.8m N-channel Power SGT MOSFETJBE083NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 133 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power ManagementDG STO-263 -3L Top ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JBE083NS TO-263-3LBE083NS 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 80 VVGS Gate-to-Source Voltage 20 VTC = 25 133CIDContinuous Drain Current ATC = 100 94CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 60 mJ