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JBE084M80V 4.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.1 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC & AC/DC (SR) Sub-systems Load Switching, Quick/Wireless Charging, Motor DrivingTO-263-3L Top ViewD DG GSSOrdering InformationDevice Package # of Pins Marking MSL TJ ( Media Quantity (pcs)C)JBE084M TO-263-3L 3 BE084M 3 -55 to 150 13-inch Reel 800Absolute Maximum Ratings (@ TA = 25C unless otherwise specified)Parameter Symbol Value UnitDrain-to-Source Voltage VDS 80 VGate-to-Source Voltage VGS 20 VTC = 25C136Continu