Скачать даташит для me4925_me4925-g:

ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON)22m@VGS=-10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)30m@VGS=-4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)minimize on-state resistance. These devices are particularly suited Exceptional on-resistance and maximum DC currentfor low voltage application such as cellular phone and notebook capabilitycomputer power management and other battery powered circuits APPLICATIONS Power Management in Note bookwhere high-side switching , and low in-line power loss are needed in Portable Equipmenta very small outline surface mount package. Battery Powered System DC/