Скачать даташит для mmbt5551:

SMD Type TransistorsSMD TypeNPN Transistors(KMBT5551)MMBT5551SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 6 VCollector current-continuous IC 0.6 ACollector Power Dissipation Pc 300mWJunction and storage temperature TJ, Tstg -55 to +150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitCollector-base breakdown voltage VCBO IC = 100uA, I E = 0 180 VCollector-emitter breakdown voltage * VCEO IC = 1.0 mA, IB = 0 160 VEmitter-base breakdown voltage VEBO IE = 10uA, I C = 0 6 VCollector cutoff current ICBO VCB = 12