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MMBT9013 NPN Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP TransistorMMBT9012 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOEmitter Base Voltage V 5 V EBOCollector Current I 500 mA CPower Dissipation P 200 mW DJunction Temperature T 150 J Storage Temperature Range T -55 to 150 STGElectrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain 100 - 250 at VCE = 1 V, IC = 50 mA Current Gain Group G HFE H 160 - 400 at VCE = 1 V, IC = 500 mA 40 - Collector Base Cutoff Current I

 

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 mmbt9013-g mmbt9013-h.pdf Проектирование, MOSFET, Мощность

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