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Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ FEATURES TO-220 TO-220F Fast Switching Low Crss 100% avalanche tested Improved dv/dt capability RoHS product TO-251 TO-252 APPLICATIONS High frequency switching mode power supply ORDERING INFORMATION Ordering Codes Package Product Code Packing MP9N20 TO-220 Tube MPF9N20 TO-220F 9N20 Tube MDP9N20 TO-251 Tube MDT9N20 TO-252 MDT9N20 Reel www.mns-kx.com ABSOLUTE RATINGS at T = 25 C, unless otherwise specified C Symbol Parameter Rating Units V Drain-to-S