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Pb Free Producthttp://www.ncepower.com NCE4953NCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE4953 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -5.1A RDS(ON)

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 nce4953.pdf Проектирование, MOSFET, Мощность

 nce4953.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 nce4953.pdf База данных, Инновации, ИМС, Транзисторы