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NCE55P04Swww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage - 60VVGSGate-Source Voltage 20TC = 25 C- 5.3eTC = 70 C- 5.0eContinuous Drain Current (TJ = 150 C) IDTA = 25 C - 5.3a, bTA = 70 C - 5.0a, bAIDM- 32ePulsed Drain Current- 4.1TC = 25 CISContinuous Source-Drain Diode CurrentTA = 25 C - 2.0a, bIASAvalanche Current - 20L = 0.1 mH