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http://www.ncepower.com NCEP6035AGNCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS(ON)=12.5m (typical) @ VGS=4.5V combination of RDS(ON) and Qg. This device is ideal for Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification. Very low on-resistance RDS(on) 150 C operating temperature Application DC/DC Converter Pb-free lead plating Ideal for high-frequency switching and synchronous100% UIS TESTED! rectification 100% Vds TESTED! DFN 5X6 Schematic Diagram Top View Bottom View
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ncep6035ag.pdf Проектирование, MOSFET, Мощность
ncep6035ag.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ncep6035ag.pdf База данных, Инновации, ИМС, Транзисторы



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