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NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.comapplications.15 A, 650 VFeatures Low Saturation Voltage Resulting in Low Conduction LossVCEsat = 1.5 V Low Switching Loss in Higher Frequency Applications 5 ms Short Circuit CapabilityC Excellent Current versus Package Size Performance Density This is a Pb-Free DeviceTypical ApplicationsG White Goods Appliance Motor Control General Purpose InverterE AC and DC Motor ControlABSOLUTE MAXIMUM RATINGSCRating Symbol Value UnitCollector-em

 

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 ngtg15n60s1eg.pdf Проектирование, MOSFET, Мощность

 ngtg15n60s1eg.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ngtg15n60s1eg.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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