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NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N-Channel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 7.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 30 V 89 A 11.4 mW @ 4.5 V Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "20 V D (5,6) Continuous Drain Cur- Tmb = 25 C ID 89 A rent RYJ-mb (Notes 1, Tmb = 100 C 63 2, 3, 4) Steady State Power Dissipation Tmb = 25 C PD 112 W G (4) RYJ-mb (Notes 1, 2, 3) Tmb = 100 C 56 Continuous Drain Cur- TA = 25 C ID 16 A S (1,2,3) rent RqJA (Notes 1 & TA = 100 C 11 3, 4) N-CHANNEL MOSFET Steady State Power Dissipation TA = 25 C PD 3.7 W

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 nvmfs4841n-d.pdf Проектирование, MOSFET, Мощность

 nvmfs4841n-d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 nvmfs4841n-d.pdf База данных, Инновации, ИМС, Транзисторы