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NVMFS4C01N Power MOSFET 30 V, 0.9 mW, 319 A, Single N-Channel, Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical 0.9 mW @ 10 V Inspection 30 V 319 A AEC-Q101 Qualified and PPAP Capable 1.2 mW @ 4.5 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant D (5) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit G (4) Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "20 V S (1,2,3) Continuous Drain Cur- TC = 25 C ID 319 A rent RqJC (Notes 1, 3) N-CHANNEL MOSFET Steady State Power Dissipation TC = 25 C PD 161 W MARKING RqJC (Notes 1, 3) DIAGRAM Continuous