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NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N-Channel Logic Level, SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses 2.1 mW @ 10 V 30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A 2.8 mW @ 4.5 V Inspection AEC-Q101 Qualified and PPAP Capable D (5,6) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) G (4) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V S (1,2,3) Gate-to-Source Voltage VGS "20 V N-CHANNEL MOSFET Continuous Drain Cur- TC = 25 C ID 143 A rent RqJC (Notes 1, 2, Steady 3) MARKING State DIAGRAM Power Dissipation TC = 25 C PD 77 W RqJC (Notes 1, 2) D S D Con