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NVMFS4C05N Power MOSFET 30 V, 116 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 3.4 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 116 A 5.0 mW @ 4.5 V Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V G (4) Continuous Drain TA = 25 C 24.7 A Current RqJA ID TA = 80 C 19.6 (Notes 1, 2 and 4) S (1,2,3) Power Dissipation TA = 25 C 3.61 W N-CHANNEL MOSFET RqJA (Notes 1, 2 PD and 4) MARKING Continuous Drain TC =