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NVMFS4C302N Power MOSFET 30 V, 1.15 mW, 241 A, Single N-Channel Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical 1.15 mW @ 10 V Inspection 30 V 241 A AEC-Q101 Qualified and PPAP Capable 1.7 mW @ 4.5 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS D (5,6) Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit G (4) Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "20 V S (1,2,3) Continuous Drain Cur- TC = 25 C ID 241 A rent RqJC (Notes 1, 2, N-CHANNEL MOSFET Steady 3) State MARKING Power Dissipation TC = 25 C PD 115 W RqJC (Notes 1, 2) DIAGRAM D Cont