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NVMFS4C310N Power MOSFET 30 V, 51 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.0 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant 30 V 51 A MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 9.0 mW @ 4.5 V Parameter Symbol Value Unit D (5-8) Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C 17 A Current RqJA ID G (4) TA = 100 C 12 (Notes 1, 2 and 4) Power Dissipation TA = 25 C 3.5 W RqJA (Notes 1, 2 PD S (1,2,3) and 4) N-CHANNEL MOSFET Steady Continuous Drain TC = 25 C 51 State Current RqJC