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NVTFS5811NL Power MOSFET 40 V, 6.7 mW, 40 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 6.7 mW @ 10 V 40 V 40 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 10 mW @ 4.5 V Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 40 V N-Channel MOSFET Gate-to-Source Voltage VGS 20 V D (5-8) Continuous Drain Cur- Tmb = 25 C ID 40 A rent RYJ-mb (Notes 1, Tmb = 100 C 28 2, 3, 4) Steady State Power Dissipation Tmb = 25 C PD 21 W G (4) RYJ-mb (Notes 1, 2, 3) Tmb = 100 C 10 S (1,2,3) Continuous Drain Cur- TA = 25 C ID 16 A rent RqJA (Notes 1