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NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These Devices are Pb-Free and are RoHS Compliant10 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-Channel MOSFETParameter Symbol Value UnitD (5-8)Drain-to-Source Voltage VDSS 40 VGate-to-Source Voltage VGS 20 VContinuous Drain Cur- Tmb = 25C ID 40 Arent RYJ-mb (Notes 1,G (4)Tmb = 100C 282, 3, 4)SteadyStatePower Dissipation Tmb = 25C PD 21 WS (1,2,3)RYJ-mb (Notes 1, 2, 3)Tmb = 100C 10MARKING DIAGRAMContinuous Drain Cur- TA = 25C ID 16