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NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N-Channel, m8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices* 11.5 mW @ 10 V 60 V 29 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 15 mW @ 4.5 V Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 60 V N-Channel Gate-to-Source Voltage VGS "20 V D Continuous Drain Cur- Tmb = 25 C ID 29 A rent RYJ-mb (Notes 1, Tmb = 100 C 20 2, 3, 4) Steady State Power Dissipation Tmb = 25 C PD 21 W G RYJ-mb (Notes 1, 2, 3) Tmb = 100 C 10 Continuous Drain Cur- TA = 25 C ID 11 A S rent RqJA (Notes 1 & TA = 100 C 8.0 3, 4) Steady State MARKING DIAGRAM Power Dissipation TA = 25 C PD 3.2 W 1 R