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NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices24 mW @ 10 V60 V 20 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)32 mW @ 4.5 VParameter Symbol Value UnitN-ChannelDrain-to-Source Voltage VDSS 60 VD (5 - 8)Gate-to-Source Voltage VGS 20 VContinuous Drain Cur- Tmb = 25C ID 20 Arent RYJ-mb (Notes 1,Tmb = 100C 142, 3, 4)SteadyState G (4)Power Dissipation Tmb = 25C PD 22 WRYJ-mb (Notes 1, 2, 3)Tmb = 100C 11S (1, 2, 3)Continuous Drain Cur- TA = 25C ID 7.6 Arent RqJA (Notes 1 &T