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NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 24 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant 60 V 20 A 32 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel Drain-to-Source Voltage VDSS 60 V D (5 - 8) Gate-to-Source Voltage VGS 20 V Continuous Drain Cur- Tmb = 25 C ID 20 A rent RYJ-mb (Notes 1, Tmb = 100 C 14 2, 3, 4) Steady G (4) State Power Dissipation Tmb = 25 C PD 22 W RYJ-mb (Notes 1, 2, 3) Tmb = 100 C 11 S (1, 2, 3) Continuous Drain Cur- TA = 25 C ID 7.6 A MARKING DIAGRAM rent