Скачать даташит для r07ds0159ej_rjh60d2dpe:

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (S)-(1) )C41. Gate2. CollectorG3. Emitter124. Collector3EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 25 ATc