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Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C1. GateG 2. Collector3. EmitterE123Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 45 ATc = 100C IC 22 ACollector peak current ic(peak) Note1 90 ACollector dissipation PC Note2 40 WJunction to case thermal impedance j-c Note2 3.125 C/ WJunction temperature Tj 150 C S