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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA P Collector Power Dissipation 200 mW CR Thermal Resistance From Junction To Ambient 625 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A, I =0 40 V (BR)CBO C ECollector-emitter breakdown voltage V I =1mA, I