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SFT1443www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C15IDContinuous Drain Current (TJ = 175 C)bTC = 125 C13IDMPulsed Drain Current 40 AISContinuous Source Current (Diode Conduction) 3IASAvalanche Current 3Single Pulse Avalanche Energy L = 0.1 mH EAS18 mJTC = 25 C96bPDMaximum Power Dissipation WTA = 25 C3aTJ, TstgOperating Junction and Storage Temperature Ra