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SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-3-11 PG-TO-262-3-1 PG-TO-220-3-1 Qualified according to JEDEC1 for target applications (D-PAK) (I-PAK) Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking PackageSGP02N120 1200V 2A 0.11mJ GP02N120 PG-TO-220-3-1150C SGD02N120 1200V 2A 0.11mJ 02N120 PG-TO-252-3-11150C SGI02N120 1200V 2A 0.11mJ GI02N120 PG-TO-262-3-1150C Maximum Ratings Parameter Symbol Value Unit

 

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 sgp02n120 sgd02n120 sgi02n120g.pdf Проектирование, MOSFET, Мощность

 sgp02n120 sgd02n120 sgi02n120g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 sgp02n120 sgd02n120 sgi02n120g.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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