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SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 7 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-07 P- TO220 -3-1 Q67040-S4285 2N06L07 SPB80N06S2L-07 P- TO263 -3-2 Q67040-S4288 2N06L07 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit A Continuous drain current 1) ID TC=25 C 80 80 320 Pulsed drain current ID puls TC=25 C 450 mJ Avalanche energy, single pulse EAS ID=80 A , VDD=25V, RGS=25 EAR 21 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt dv/dt 6 kV/ s IS=80A, VDS=44V, di/dt=200A/ s, Tjmax=175 C Gate source voltage VGS V 20 Power dissipation Ptot 210 W TC=25 C C