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SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode Features Applications P-MOSFET Bidirectional blocking switch; DC-DC conversion applications; VDS VGS RDSon TYP ID Li-battery charging; 60mR@-4V5 -20V 8V 75mR@-2V5 -3.4A Pin configuration 105mR@-1V8 Top View Schottky VR IR VF IO 6 5 4 20V 15uA 410mV@1A 2A K G S General Description SSC8K23GN2 combines a P-Channel enhancement K K D mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. A NC D 1 2 3 Package Information 1 / 6 SSC-4V0 http://www.afsemi.com SSC8K23GN2 Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 -