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ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 1) mounted on a ceramic substrate ( 250 mm2 X 0.8 t) Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. Unit DC Current Gain hFE 200 - 400 - at VCE = 5 V, IC = 30 mA Collector Base Cutoff Current ICBO - - 0.1 A at VCB = 160 V Emitter Base Cutoff Current IEBO - - 0.1 A at VEB = 4 V Collector Base Breakdown Voltage V(BR)CBO 160 - - V at IC