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S T M8358SS amHop Microelectronics C orp. Oct.28, 2005Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 48 @ V G S = -10V25 @ VG S = 10V-30V -5.2A30V 7.2A 72 @ V G S = -4.5V36 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)UnitP arameter S ymbol N-C hannel P-C hannelDrain-S ource VoltageVDS 30 -30 V 20VGS 20Gate-S ource Voltage V 25 C 7.2 -5.2AIDDrain C urrent-C ontinuous @ Ta 70 C 6.1 -4.4 Aa-Pulsed IDM29 -20 ADrain-S ource Diode Forward C urrentIS 1.7 -1.7 ATa= 25 C2Maximum Power DissipationPDW Ta=70 C1.44Operating Junction and S torageC-55 to 150TJ, TS TGTemperature R ange