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GreenProductSTM8360TaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 42 @ VGS=-10V40V 6.6A-40V -5.5A45 @ VGS=4.5V 65 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1S 11(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsN-Channel P-ChannelVDS Drain-Source Voltage 40 -40 VVGS Gate-Source Voltage20 20 VTC=25C 6.6 -5.5 AaID Drain Current-ContinuousATC=70C 5.3 -4.4bIDM33 -31 A-PulseddEAS Sigle Pulse Avalanche Energy 16 19 mJTC=25C 2 WaPDMaximum Power DissipationTC=70C1.28 WTJ, TSTG Operating Junction and Storage-55 to 150 CTemperature RangeTHERMAL CHARACTERISTICSaRJA Therma