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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 600V, RDS(on)(typ.)=2.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE Package information. Example:F:TO-220F; K:TO-262;D:TO-252; MN:TO-251N;Silan VDMOS Code T:TO-220;MJ:TO-251J-3L. of F-Cell proce