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Ordering number : ENA0841BTF252N-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.4mS, USFPFeatures High gain : GV=1.0dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in Electret Condenser Microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitGate-to-Drain Voltage VGDO --20 VGate Current IG 10 mADrain Current ID 1 mAAllowable Power Dissipation PD 30 mWJunction Temperature Tj 150 CStorage Temperature Tstg --55 to +150 CStresses exceeding Maximum Ratings may dam