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TK56E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK56E12N1TK56E12N1TK56E12N1TK56E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Drain (heatsink)3: SourceTO-2204. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)4. Absolute Maximum Rati